0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 KAT750 (bat750) features very low forward voltage drop high conductance for use in dc-dc converter, pcmcia, and mobile telecommunications applications absolute maximum ratings ta = 25 parameter symbol rating unit peak repetitive reverse voltage v rrm working peak reverse voltage v rwm dc blocking voltage v r rms reverse voltage v r(rms) 28 v average rectified output current i o 0.75 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 5.5 a power dissipation p d 350 mw typical thermal resistance junction to ambient r ja 286 /w operating and storage temperature range t j ,t stg -40to+125 v 40 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit reverse breakdown voltage v (br)r i r = 300 a 40 45 v i f = 50ma 225 280 i f = 100ma 235 310 i f = 250ma 290 350 i f = 500ma 340 420 i f = 750ma 390 490 i f = 1000ma 420 540 i f = 1500ma 475 650 leakage current i r v r = 15v 50 100 a v r = 0, f = 1.0mhz 175 v r = 25v, f = 1.0mhz 25 v f mv forwarad voltage pf c j junction capacitance marking marking k77 or k79 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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